description our FCI2301 p-channel high-density trench mosfets utilize advanced processing techniques to achieve extremely low on-resistanc e per silicon area. this benefit, combined with the fast switching speed and ruggedized device design of our products provides the designer with an extremely efficient and reliable dev ice for use in a variety of applications. features ? super high dense cell trench design for low r ds(on) ? p-channel trench mosfet ? sot-23-3l footprint ? available in tape and reel ? rugged and reliable v dss = - 20v r ds(on) = 130m ? (max.) @ v gs = - 4.5v (i d = - 2.8a) r ds(on) = 190m ? (max.) @ v gs = - 2.5v (i d = - 2.0a) absolute maximum ratings (t a = 25 o c unless otherwise specified) characteristic symbol value unit drain-source voltage v ds -20 v continuous drain current 1 @ t a = 25 o c i d -2.3 pulsed drain current 2 i dm -10 a maximum power dissipation 1 p d 1.25 w drain-source diode forward current 1 i s -1.6 a gate-to-source voltage v gs 8 v junction and storage temperature range t j , t stg -55 to + 150 o c thermal resistance characteristic symbol value unit junction-to-ambient thermal resistance 1 r ja 85 o c/w notes: 1. surface mounted on fr4 board, t 10 sec. 2. pulse test: pulse width 300 s, duty cycle 2%. FCI2301 p-channel high-density trench mosfet
electrical characteristics (t a = 25 o c unless otherwise specified) parameter symbol condition min. typ. 3 max. unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = -250a -20 v zero gate voltage drain current i dss v ds = -16v, v gs = 0v -1 a gate-body leakage i gss v gs = -8v, v ds = 0v -100 na on characeteristics 2 gate threshold voltage v gs(th) v ds = v gs , i d = -250a -0.6 v v gs = -4.5v, i d = -2.8a 130 m
drain-source on-state resistance r ds(on) v gs = -2.5v, i d = -2.0a 190 m
drain-source diode characteristics 2 diode forward voltage v sd v gs = 0v, i s = -1.0a -1.0 v switching characteristics 2 total gate charge q g 4.32 nc gate-source charge q gs 1.06 nc gate-drain charge q gd v ds = -10v, i d = -1a v gs = -4.5v 0.84 nc switching characteristics 3 turn-on delay time t d(on) 13 ns rise time t r 36 ns turn-off delay time t d(off) 42 ns fall time t f v dd = -10v, i d = -1a v gen = -4.5v r l = 10 ohms r gen = 10 ohms 34 ns notes: 2. pulse test: pulse width ? 300 s, duty cycle ? 2%. 3. guaranteed by design, not subject to production testing. FCI2301 p-channel high-density trench mosfet
ratings and characteristic curves FCI2301 p-channel high-density trench mosfet
FCI2301 p-channel high-density trench mosfet
sot-23 package dimensions FCI2301 p-channel high-density trench mosfet s21 marking guide: s21 = FCI2301 sot-23 package marking
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